Structures by: Radautsan S. I.

Total: 7

InSb

InSb

Molodyan, I.P.Radautsan, S.I.

Soviet Research in New Semiconductor Materials, Ed. D.N. Nasledov, Consultant Bureau, New York (1965) 1965, 94-100

a=6.47Å   b=6.47Å   c=6.47Å

α=90°   β=90°   γ=90°

In2 (Zn S4)

In2S4Zn

Biyushkina, A.V.Donika, F.G.Radautsan, S.I.

Doklady Akademii Nauk SSSR (1989) 306, 617-619

a=3.87Å   b=3.87Å   c=74.15Å

α=90°   β=90°   γ=120°

In2 Zn3 S6

In2S6Zn3

Biyushkina, A.V.Donika, F.G.Mustya, I.G.Radautsan, S.I.

Izvestiya Akademii Nauk Moldavskoi SSR, Seriya Fiziko-Tekhnicheskikh i Matematicheskikh Nauk (1989) 3, 68-70

a=3.87Å   b=3.87Å   c=18.9Å

α=90°   β=90°   γ=120°

In2 (Zn S4)

In2S4Zn

Donika, F.G.Semiletov, S.A.Radautsan, S.I.Mustya, I.G.Donika, T.V.Kiosse, G.A.

Soviet Physics, Crystallography (= Kristallografiya) (1971) 16, 190-192

a=3.85Å   b=3.85Å   c=24.68Å

α=90°   β=90°   γ=120°

In2 Zn2 S5

In2S5Zn2

Donika, F.G.Radautsan, S.I.Mustya, I.G.Kiosse, G.A.Semiletov, S.A.Donika, T.V.

Soviet Physics, Crystallography (= Kristallografiya) (1971) 15, 698-700

a=3.85Å   b=3.85Å   c=46.27Å

α=90°   β=90°   γ=120°

Sn (Mo6 S8)

Mo6S8Sn

Alekseevskii, N.E.Dobrovol'skii, N.M.Kiosse, G.A.Markus, M.M.Malinovskii, T.I.Radautsan, S.I.Samus, D.P.

Doklady Akademii Nauk SSSR (1978) 242, 87-89

a=6.515Å   b=6.515Å   c=6.515Å

α=89.6°   β=89.6°   γ=89.6°

Zn In2 S4

In2S4Zn

Donika, F.G.Kiosse, G.A.Radautsan, S.I.Semiletov, S.A.Mustya, I.G.

Kristallografiya (1972) 17, 663-665

a=3.85Å   b=3.85Å   c=24.68Å

α=90°   β=90°   γ=120°